Third generation power MOSFETs from the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features :-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specifications :-
- Drain-Source Breakdown Voltage Minimum : 500V
- Temperature Coefficient type : 0.061V/°C
- Gate-Source Threshold Voltage Minimum : 2.0V
- Gate-Source Threshold Voltage Maximum : 4.0V
- Gate-Source Leakage Maximum : +100nA
- Zero Gate Voltage Drain Current Maximum : 250μA
- Drain-Source On-State Resistance Maximum : 1.5Ω
- Forward Transconductance minimum : 2.5S
Reviews
There are no reviews yet.