25N120ANTD IGBT – 1200V 25A NPT Trench IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.
Features:-
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C
• Extremely Enhanced Avalanche Capability
Applications:-
• Induction Heating
• Microwave Oven
Specifications:-
| Symbol | Description | Ratings | Units |
| VCES | Collector-Emitter Voltage | 1200 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Collector Current @ TC = 25°C | 50 | A |
| Collector Current @ TC = 100°C | 25 | A | |
| ICM | Pulsed Collector Current | 90 | A |
| IF | Diode Continuous Forward Current @ TC = 25°C | 50 | A |
| Diode Continuous Forward Current @ TC = 100°C | 25 | A | |
| IFM | Diode Maximum Forward Current | 150 | A |
| PD | Maximum Power Dissipation @ TC = 25°C | 312 | W |
| Maximum Power Dissipation @ TC = 100°C | 125 | W | |
| TJ | Operating Junction Temperature | -55 to +150 | °C |
| Tstg | Storage Temperature Range | 55 to +150 | °C |
| TL | Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds | 300 | °C |
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