The NAND gate is monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. All inputs are protected against static discharge and latching conditions.
Features:-
- Two Independent 4-input NAND Gates
- Standard Pin Configuration
- Wide Operating Voltage Range
- Operating Temperature to 85°C
- Low Power CMOS
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