BFW10 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
Features:-
• Metal TO-72 can package
• Advanced process technology
• Low error voltage
• Fast switching speed
• Full-voltage operation
• High power and current handling capability
Detailed Specifications:-
| Transistor Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30VDC |
| Drain-Gate Voltage (VDG) | 30VDC |
| Reverse Gate-Source Voltage (VGSR) | 30VDC |
| Forward Gate Current (IGF) | 10mA |
| Gate-Source Cut-off Voltage (VGS(off)) | 8VDC |
| Gate-Source Voltage (VGS) | 7.5VDC |
| Zero-Gate Voltage Drain Current (IDSS) | 20mA |
| Operating Temperature Range | -65 – 150°C |
| Power Dissipation (PD) | 300mW |
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