15N120 1200V NPT Trench IGBT Transistor

• High Voltage IGBT with low saturation voltage
• Collector-Emitter Voltage (VCE): 1200V
• Collector Current (IC): 30A @25°C
• Minimum Gate threshold voltage (VGE) is 4.5V
• Maximum Gate threshold voltage (VGE) is 8.5V

The 15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A. It also has a very low collector emitter saturation voltage of 1.9V and low switching losses.

FEATURES: 
·High speed switching
·High system efficiency
·Soft current turn-off waveforms
·Extremely enhanced avalanche capability