IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features:-
• Low gate charge
• Low Crss (typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 400V |
| Continuous Drain Current (Id) | 10A |
| Drain-Source Resistance (Rds On) | 0.54Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 53 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 134W |
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